R. D. Horning

Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

J. A. Van Vechten, J. D. Zook, R. D. Horning et al. · Japanese Journal of Applied Physics · 1992 · 168 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Temperature-dependent absorption measurements of excitons in GaN epilayers

A. J. Fischer, W. Shan, J. J. Song et al. · Applied Physics Letters · 1997 · 116 citations

Semiconductors, Wide-bandgap Semiconductor, Optical Materials +13

Sealed-cavity resonant microbeam pressure sensor

D.W. Burns, J. D. Zook, R. D. Horning et al. · Sensors and Actuators A Physical · 1995 · 96 citations

Micro-optical Component, Sensor Technology, Micro-electromechanical System +1

Femtosecond four-wave-mixing studies of nearly homogeneously broadened excitons in GaN

A. J. Fischer, W. Shan, G. H. Park et al. · Physical review. B, Condensed matter · 1997 · 69 citations

Wide-bandgap Semiconductor, Engineering, Ti Fwm +16

Intrinsic exciton transitions in GaN

W. Shan, A. J. Fischer, Sung‐Ho Hwang et al. · Journal of Applied Physics · 1998 · 44 citations

Wide-bandgap Semiconductor, Engineering, Nanoelectronics +16