G. H. Park

Femtosecond four-wave-mixing studies of nearly homogeneously broadened excitons in GaN

A. J. Fischer, W. Shan, G. H. Park et al. · Physical review. B, Condensed matter · 1997 · 69 citations

Wide-bandgap Semiconductor, Engineering, Ti Fwm +16

Ultrafast carrier dynamics in a highly excited GaN epilayer

C. K. Choi, Young-Kil Kwon, Jerzy S. Krasiński et al. · Physical review. B, Condensed matter · 2001 · 39 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +12

High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

Yong‐Hoon Cho, F. Fedler, R. J. Hauenstein et al. · Journal of Applied Physics · 1999 · 36 citations

Wide-bandgap Semiconductor, Electrical Engineering, Kinematic Diffraction Theory +10

Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition

Hwan‐Kuk Yuh, Euijoon Yoon, S. K. Shee et al. · Journal of Applied Physics · 2002 · 13 citations

Materials Science, Ii-vi Semiconductor, Structural Properties +14