Will Mecouch

Preparation and characterization of atomically clean, stoichiometric surfaces of <i>n</i>- and <i>p</i>-type GaN(0001)

K. M. Tracy, Will Mecouch, R. F. Davis et al. · Journal of Applied Physics · 2003 · 114 citations

Materials Science, Wide-bandgap Semiconductor, Chemical Engineering +15

Measurement of the band offsets of SiO2 on clean <i>n</i>- and <i>p</i>-type GaN(0001)

T. E. Cook, C. C. Fulton, Will Mecouch et al. · Journal of Applied Physics · 2003 · 100 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Band offset measurements of the Si3N4/GaN (0001) interface

T. E. Cook, C. C. Fulton, Will Mecouch et al. · Journal of Applied Physics · 2003 · 91 citations

Materials Science, Semiconductors, Electrical Engineering +13

Band offset measurements of the GaN (0001)/HfO2 interface

T. E. Cook, C. C. Fulton, Will Mecouch et al. · Journal of Applied Physics · 2003 · 70 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +13

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Pramod Reddy, M. Hayden Breckenridge, Qiang Guo et al. · Applied Physics Letters · 2020 · 50 citations · Full text

Large Area, Wide-bandgap Semiconductor, Electrical Engineering +9