Joo Tae Moon

A novel cell technology using N-doped GeSbTe films for phase change RAM

Hideki Horii, J.H. Yi, J.H. Park et al. · 2004 · 122 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental Investigation of the Impact of LWR on Sub-100-nm Device Performance

Hae‐Won Kim, Jeong Yong Lee, J. Shin et al. · IEEE Transactions on Electron Devices · 2004 · 90 citations

Engineering, Electrical Engineering, Materials Science +16

An edge contact type cell for Phase Change RAM featuring very low power consumption

Y.H. Ha, J.H. Yi, Hideki Horii et al. · 2003 · 78 citations

Engineering, Electrical Engineering, Materials Science +14

Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive)

Jiyoung Kim, Aijun Hong, Sungmin Kim et al. · 2006 · 78 citations

Engineering, Computer Engineering, Electrical Engineering +17

Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb

S.L. Cho, J.H. Yi, Y.H. Ha et al. · 2005 · 71 citations

Engineering, Materials Science, Electronic Materials +5