Statistics
Publications
15
Citations
816
H-Index
14
Active since
1998
Y.H. Ha is an author at Samsung (South Korea) specializing in materials science, engineering, and semiconductor devices.
Publications per year
1998–2013
15
15
A novel cell technology using N-doped GeSbTe films for phase change RAM
Hideki Horii, J.H. Yi, J.H. Park et al. · 2004 · 122 citations
Writing current reduction for high-density phase-change RAM
Y.N. Hwang, Sojung Lee, S.J. Ahn et al. · 2004 · 85 citations
Highly manufacturable high density phase change memory of 64Mb and beyond
Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations
An edge contact type cell for Phase Change RAM featuring very low power consumption
Y.H. Ha, J.H. Yi, Hideki Horii et al. · 2003 · 78 citations
Low power operating bipolar TMO ReRAM for sub 10 nm era
Min Jung Kim, In-Hwan Baek, Y.H. Ha et al. · 2010 · 77 citations
1–5 of 15