Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 87 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationSemiconductor DevicesSurface ScienceAtomic Force MicroscopyDevice CharacterizationElectrical CharacterizationForce SensingScanning Probe MicroscopySurface CharacterizationAtomic Force Microscopy AnalysisCapacitive CouplingCapacitive Force SensingDopant ProfilingElectrostatic Force MicroscopyElectrostatic Force ModelingKelvin Probe Force MicroscopyTip-sample Interactions
A force-based scanning Kelvin probe microscope has been applied to the problem of dopant profiling in silicon. Initial data analysis assumed the detected electrostatic force couples the sample and only the tip at the end of a force sensing cantilever. Attempts to compare measurements quantitatively against device structures with this simple model failed. A significant contribution arises from the electrostatic force between the sample and the entire cantilever, which depends strongly upon the relative size of the tip, cantilever, and lateral inhomogeneities in the surface topography and material composition of the sample. Actual and simulated measurements which demonstrate the characteristic signature of this effect are presented.
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