Applied Physics Letters · 1970 · 27 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingIon ImplantationSilicon MaterialsAmorphous DefectsAmorphous RegionsCarrier ConcentrationChannelingConcentration ProfilesHall Effect MeasurementsSilicon Electrical PropertiesSilicon Wafers
Sheet-resistivity and Hall-effect measurements on ion-implanted silicon wafers have been performed. Carrier concentration profiles over the range of about 1019–1011 carriers/cm3 have been obtained for implants of 1014 ions/cm2 of 11B, 27Al, and 31P. Three regions, due to different penetration mechanisms, can be clearly distinguished: the amorphous range, the channeling range, and the supertail. Some indication for a kinetic substitution mechanism is seen in the channeling region.
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DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICON
R.W. Bower, R. Baron, J. W. Mayer et al. · Applied Physics Letters · 1966 · 23 citations
Natural Sciences, Materials Engineering, Materials Science +16