Applied Physics Letters · 1966 · 23 citations · 2 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsRadiation PhysicsSemiconductor DevicesImplant MaterialsIon Channel ModelingIon ChannelsIon ImplantationSilicon MaterialsCapacitance-voltage CharacterizationCapacitance-voltage MeasurementsCapacitance-voltage ProfilingCapacitance-voltage RelationsCurrent Density ProfilesIon Implantation EffectsSiliconSilicon Electrical Properties
Deep penetration of donors has been observed as a result of 20-kV Sb ion implantations into 〈110〉- and 〈111〉-oriented, high-resistivity silicon. The density profiles were measured by a capacitance-voltage method. The deep penetrating tail was found to be independent of such experimental parameters as temperature of implant (for T ≥ 300°C), orientation, annealing, and surface condition; and to empirically follow a N ∝ (x + B)2.2 dependence over four orders of magnitude (B ≈ 0.15 μ). This component has not been observed previously in silicon and has a different dependence on implantation parameters and a different functional form than that observed in ion channeling.
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