Numerical simulation of current–voltage characteristics of AlGaN/GaN HEMTs at high temperatures

Abstract

The de drain current characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures have been studied by numerical simulation from the self-consistent solution of Schrödinger's and Poisson's equations. The effects of temperature on the polarization and conduction band offset in the heterojunction have been considered. Our simulation results of the drain current at high temperature agree very well with reported experimental data. There is a significant reduction of saturation drain current when the temperature increases, and it is concluded that this is caused by both the decrease of saturation carrier velocity and two-dimensional electron density in the HEMT.