An analysis and the fabrication technology of the lambda bipolar transistor

Abstract

A new type of voltage-controlled negative-differential-resistance device using the merged integrated circuit of an n-p-n (p-n-p) bipolar transistor and an n(p)-channel enhancement MOSFET, which is called the Lambda bipolar transistor, is studied both experimentally and theoretically. The principal operation of the Lambda bipolar transistor is characterized by the simple circuit model and device physics. The important device properties such as the peak voltage, the peak current, the valley voltage, and the negative differential resistance, are derived in terms of the known device parameters. Comparisons between the characteristics of the fabricated devices and the theoretical model are made, which show that the analysis is in good agreement with the observed device characteristics.