Concepedia

Negative resistance of a modified insulated-gate field-effect transistor

K. Lehovec, R. Zuleeg

Proceedings of the IEEE · 1974 · 15 citations · 4 references

DOI

Concepts

Abstract

The current-voltage characteristics of a new circuit element showing negative resistance are described and analyzed. The device is an enhancement field-effect transistor interacting with a bipolar transistor.

References

4

Carrier mobility and current saturation in the MOS transistor

S.R. Hofstein, G. Warfield · IEEE Transactions on Electron Devices · 1965 · 87 citations

, , +16

Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)

V.G.K. Reddi, C. T. Sah · IEEE Transactions on Electron Devices · 1965 · 81 citations

, , +12

Impact ionization current in MOS devices

W. Lattin, James L. Rutledge · Solid-State Electronics · 1973 · 22 citations

, , +13

Anomalous enhancement of substrate terminal current beyond pinch-off in silicon n-channel MOS transistors and its related phenomena

M. Nakahara, H. IWASAWA, Kiyoshi Yasutake · Proceedings of the IEEE · 1968 · 18 citations

, , +14