Proceedings of the IEEE · 1968 · 18 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportComplementary Metal-oxide-semiconductor TechnologyCurrent-voltage CharacteristicsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesSilicon MaterialsElectron Impact IonizationGate Oxide InterfacesInterface Trap DensityIonizationSilicon
Anomalous enhancement of substrate terminal current is observed in n-channel silicon MOS transistors beyond pinch-off, but not in p-channel devices. This phenomenon is interpreted as the hole current flow caused by the impact ionization of trapped electrons in Si-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface states and of valenced electrons at the pinched-off channel of the silicon surface.
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