V.G.K. Reddi

Avalanche injection and second breakdown in transistors

P.L. Hower, V.G.K. Reddi · IEEE Transactions on Electron Devices · 1970 · 233 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Frequency dependence of the reverse-biased capacitance of gold-doped silicon P⁺N step junctions

C. T. Sah, V.G.K. Reddi · IEEE Transactions on Electron Devices · 1964 · 162 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)

V.G.K. Reddi, C. T. Sah · IEEE Transactions on Electron Devices · 1965 · 81 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +11

Influence of surface conditions on silicon planar transistor current gain

V.G.K. Reddi · Solid-State Electronics · 1967 · 79 citations

Electrical Engineering, Engineering, Nanoelectronics +5

Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations

T. R. Cass, V.G.K. Reddi · Applied Physics Letters · 1973 · 54 citations

Materials Science, Defect Tolerance, Sio2 Film +15