Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations

Abstract

During a study of the annealing of damage produced by high-dose (1015–1016 ions/cm2) arsenic implantations into Si, a stable high-defect-density structure was observed. It resulted from implantations through thin SiO2 films covering the Si. Formation of the stable defect structure is related to the presence of the SiO2 film during implantation, but not during annealing. Subsequent experiments indicate that knock-on of oxygen by the As ions is not directly responsible for the effect.