Concepedia

J. D. Sansbury

JD

Statistics

Publications

6

Citations

156

H-Index

6

Active since

1969

Affiliations

Stanford University(Current)

J. D. Sansbury is an author at Stanford University specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsPhysicsAtomic PhysicsSemiconductorsMaterial ScienceCrystalline DefectsElectrical Insulation

Publications per year

1969–1978

6

Publications

6

Properties of ion implanted silicon, sulfur, and carbon in gallium arsenide

J. D. Sansbury, J. F. Gibbons · Radiation Effects · 1970 · 52 citations

Materials Science, Semiconductors, Electrical Engineering +15

Channeling and dechanneling of ion-implanted phosphorus in silicon

V.G.K. Reddi, J. D. Sansbury · Journal of Applied Physics · 1973 · 43 citations

Electrical Engineering, Ion-implanted Phosphorus, Engineering +11

CONDUCTIVITY AND HALL MOBILITY OF ION-IMPLANTED SILICON IN SEMI-INSULATING GALLIUM ARSENIDE

J. D. Sansbury, J. F. Gibbons · Applied Physics Letters · 1969 · 20 citations

Materials Science, Semiconductors, Electrical Engineering +13

Modelling and measurement of surface impurity profiles of laterally diffused regions

H.-G. Lee, R.W. Dutton, J. D. Sansbury et al. · IEEE Journal of Solid-State Circuits · 1978 · 19 citations

Engineering, Semiconductor Device, Impurity Profiles +17

Channeling of Phosphorous Ions in Silicon

V.G.K. Reddi, J. D. Sansbury · Applied Physics Letters · 1972 · 12 citations

Channeled 31P, Engineering, Nuclear Physics +14

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