Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates

D.C. Dumka, H.Q. Tserng, Ming-Yih Kao et al. · IEEE Electron Device Letters · 2003 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors

A. Mahajan, G. Cueva, M. Arafa et al. · IEEE Electron Device Letters · 1997 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT

Tamio Saito, N. Hidaka, Katsuji Ono et al. · 2002 · 23 citations

Engineering, Electrical Engineering, Analog Electronics +16

Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

Hung-Ming Chuang, Shiou‐Ying Cheng, Chun‐Yuan Chen et al. · IEEE Transactions on Electron Devices · 2003 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Depletion-mode and enhancement-mode InGaP/GaAs  -HEMTs for low supply-voltage applications

Y-W Wu, W-S Lour, Y-J Yang · Semiconductor Science and Technology · 2002 · 23 citations

Engineering, Electrical Engineering, Materials Science +17