Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

Abstract

The dielectric function (DF) of phase-pure cubic AlN films is determined by ellipsometry. The sharp onset of the imaginary part of the DF defines the direct absorption edge corresponding to a conduction-to-valence band spacing at the center of the Brillouin zone (BZ) of 5.93 eV. Phonon-assisted transitions lead to the pronounced absorption tail below this edge from which the indirect gap of zinc-blende AlN is estimated with 5.3 eV. Transitions due to four additional critical points of the BZ are resolved at higher photon energies. The high-frequency and static dielectric constants are determined with 4.25 and 8.07, respectively.