T. Wethkamp - Concepedia

Author

T. Wethkamp

Technische Universität Berlin

Also Known As

T. Wethkamp

Publications

536

Citations

H-Index

Concepts

All Affiliations

Technische Universität Berlin Max Planck Institute for Solid State Research Technical University of Munich Schott (Germany)Linköping University

About

T. Wethkamp is an author at Technische Universität Berlin specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	10	10	423
2	Engineering	9	9	362
3	Materials Science	4	4	175
4	Natural Sciences	3	3	155
5	Electrical Engineering	2	2	103

T. Wethkamp

Publications

466

Citations

H-Index

Page 1

	Year	Citations
Dielectric function of wurtzite GaN and AlN thin films Lorin X. Benedict, T. Wethkamp, K. Wilmers, Solid State Communications Aluminium NitrideDielectric FunctionElectrical EngineeringEngineeringApplied Physics	1999	89
Spectroscopic ellipsometry measurements of Al Ga1−N in the energy range 3–25 eV T. Wethkamp, K. Wilmers, N. Esser, Thin Solid Films PhysicsAl Ga1−nSpectroscopyNatural SciencesApplied Physics	1998	61
Temperature dependence of the InP(001) bulk and surface dielectric function M. Zorn, T. Trepk, J.‐T. Zettler, Applied Physics A Materials ScienceMaterial AnalysisEngineeringSurface ScienceApplied Physics	1997	55
Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range T. Wethkamp, K. Wilmers, Christoph Cobet, Physical review. B, Condensed matter Aluminium NitrideOptical MaterialsEngineeringEv Energy RangeSpectroscopic Property	1999	53
AlGaN-Based Bragg Reflectors O. Ambacher, M. Arzberger, Daniel Brunner, MRS Internet Journal of Nitride Semiconductor Research	1997	43
Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001) J.‐T. Zettler, T. Wethkamp, M. Zorn, Applied Physics Letters Ii-vi SemiconductorMonolayer PeriodicityEngineeringPhysicsOptical Properties	1995	41
In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry E. Steimetz, J.‐T. Zettler, F. Schienle, Applied Surface Science Materials ScienceIi-vi SemiconductorEngineeringOptical PropertiesApplied Physics	1996	36
VUV-ellipsometry on BexZn1−xSe and BeTe K. Wilmers, T. Wethkamp, N. Esser, Journal of Electronic Materials Physical ChemistrySpectroscopic PropertyApplied PhysicsEngineering	1999	31
Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV Christoph Cobet, K. Wilmers, T. Wethkamp, Thin Solid Films Materials ScienceOptical MaterialsEngineeringOptical PropertiesSpectroscopy	2000	31
VUV Ellipsometry on Beryllium Chalcogenides K. Wilmers, T. Wethkamp, N. Esser, physica status solidi (b) Optical MaterialsEngineeringOptoelectronic DevicesElectronic PropertiesSemiconductor Nanostructures	1999	14

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