P. Schley

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. D. C. King, T. D. Veal, C. F. McConville et al. · Applied Physics Letters · 2007 · 106 citations · Full text

Semiconductors, Surface Characterization, Engineering +14

Molecular beam epitaxy of phase pure cubic InN

Jörg Schörmann, D. J. As, K. Lischka et al. · Applied Physics Letters · 2006 · 83 citations

Materials Science, Semiconductors, Engineering +12

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

E. Sakalauskas, H. Behmenburg, Christoph Hums et al. · Journal of Physics D Applied Physics · 2010 · 75 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +18

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

Marcus Röppischer, R. Goldhahn, Georg Rossbach et al. · Journal of Applied Physics · 2009 · 58 citations

Aluminium Nitride, Engineering, Solid-state Chemistry +16

Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements

Martin Feneberg, Jürgen Däubler, K. Thonke et al. · Physical Review B · 2008 · 57 citations

Categoryquantum Electronics, Charge Excitations, Engineering +18