Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2011 · 15 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSurface EngineeringDefect ModelingDevice ModelingDevice SimulationMask DesignProcess SimulationThin Film LithographyDeep Ultraviolet LithographyExtreme Ultraviolet LithographyInterpreting Experimental DataMultilayer Resist ProcessingOptical LithographyPhotoresist Sacrificial LayersProjection Lithography
Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist model parameters are calibrated with experimental data. The models are applied for the investigation of the impact of mask multilayer defects on the lithographic process.