Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell

J. M. Olson, Sarah Kurtz, A. Kibbler et al. · Applied Physics Letters · 1990 · 310 citations

Engineering, Electrical Engineering, Materials Science +17

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy et al. · Applied Physics Letters · 1989 · 273 citations

Engineering, Materials Engineering, Materials Science +17

Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure

Jianhui Chen, J. R. Sites, Ian L. Spain et al. · Applied Physics Letters · 1991 · 112 citations

Engineering, Materials Engineering, Materials Science +17

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

Francisco Eduardo Gontijo Guimarães, B. Elsner, R. Westphalen et al. · Journal of Crystal Growth · 1992 · 90 citations

Engineering, Materials Engineering, Materials Science +17

Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy

K. Streubel, V. Härle, F. Scholz et al. · Journal of Applied Physics · 1992 · 69 citations

Engineering, Materials Engineering, Materials Science +17