Concepedia

Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices

Gary W. Paterson, J. A. Wilson, David A. J. Moran, Richard J. Hill, A.R. Long, Iain Thayne, M. Passlack, Ravi Droopad

Materials Science and Engineering B · 2006 · 21 citations · 11 references

DOI

Concepts

References

11

The work function of the elements and its periodicity

Herbert B. Michaelson · Journal of Applied Physics · 1977 · 4.2K citations

, , +8

The electronic structure at the atomic scale of ultrathin gate oxides

David A. Muller, T. Sorsch, S. Moccio et al. · Nature · 1999 · 961 citations

, , +16

Dielectric properties of electron-beam deposited Ga2O3 films

M. Passlack, N. E. J. Hunt, E. Fred Schubert et al. · Applied Physics Letters · 1994 · 214 citations

, , +15

Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

M. Passlack, M. Hong, J. P. Mannáerts et al. · IEEE Transactions on Electron Devices · 1997 · 162 citations

, , +17

Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

Agnese Callegari, P.D. Hoh, D. A. Buchanan et al. · Applied Physics Letters · 1989 · 127 citations

, , +17