IEEE Electron Device Letters · 1989 · 48 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ReliabilitySemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor ReliabilityWide Band Gap SemiconductorsDevice DegradationHigh-temperature Device OperationOhmic ConductionOhmic ContactsOhmic MaterialsPassivation TechniquesReliability DegradationSemiconductor Stability
A technology for the fabrication of GaAs devices for operation at 300 degrees C is presented. The high reliability of the devices is mainly due to diffusion barrier of WSi/sub 2/ in the ohmic contacts and to an optimized Si/sub 3/N/sub 4/ passivation. It is shown that MESFETs produced with this technology demonstrate a remarkable stability of their characteristics, even after 100 h of storage at 300 degrees C, and only a little degradation after 100 h at 400 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Physics of Semiconductor Devices
Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations
Mechanism of surface conduction in semi-insulating GaAs
Mau-Chung Frank Chang, C. P. Lee, Linlin Hou et al. · Applied Physics Letters · 1984 · 42 citations