Katsuki Furukawa - Concepedia

Author

Katsuki Furukawa

The University of Osaka

Also Known As

K. Furukawa, Katsuki FURUKAWA, Katsuki Furukawa

Publications

539

Citations

H-Index

Concepts

All Affiliations

The University of Osaka

About

Katsuki Furukawa is an author at The University of Osaka specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	506
2	Applied Physics	11	12	506
3	Electrical Engineering	5	5	197
4	Natural Sciences	1	1	11
5	Chemistry	1	1	11

Katsuki Furukawa

Publications

516

Citations

H-Index

Page 1

	Year	Citations
Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering Hiroo Yugami, Satοru Nakashima, Akiyoshi Mitsuishi, Journal of Applied Physics Materials ScienceSemiconductor TechnologyEngineeringPhysicsCoupled Mode	1987	142
Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition Akira Suzuki, Atsuko Uemoto, Mitsuhiro Shigeta, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	1986	81
Epitaxial growth of β-SiC single crystals by successive two-step CVD Akira Suzuki, Katsuki Furukawa, Yoshiyuki Higashigaki, Journal of Crystal Growth Materials ScienceMaterials EngineeringSemiconductor TechnologyEngineeringCrystal Growth Technology	1984	66
3C-SiC <i>p</i>-<i>n</i> junction diodes Katsuki Furukawa, Atsuko Uemoto, Mitsuhiro Shigeta, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringAppropriate Impurity Doping	1986	50
Electronic properties in <i>p</i>-type GaN studied by Raman scattering Hisatomo Harima, Toshiaki Inoue, S. Nakashima, Applied Physics Letters SemiconductorsSemiconductor TechnologyWide-bandgap SemiconductorEngineeringPhysics	1998	40
Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD Akira Suzuki, Yoshihisa Fujii, Hajime Saito, Journal of Crystal Growth Electrical EngineeringSolid-state LightingEngineeringPhotoluminescenceApplied Physics	1991	28
Insulated-gate and junction-gate FET's of CVD-Grown β-SiC Katsuki Furukawa, Akitsugu Hatano, Atsuko Uemoto, IEEE Electron Device Letters Cubic Silicon CarbideSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	1987	22
Analysis of temperature dependence of Hall mobility of nondoped and nitrogen-doped β-SiC single crystals grown by chemical vapor deposition Akira Suzuki, Atsuko Ogura, Katsuki Furukawa, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyEngineeringPhysics	1988	19
Bulk Growth of Single-Crystal Cubic Silicon Carbide by Vacuum Sublimation Method Katsuki Furukawa, Yoshimitsu Tajima, Hajime Saito, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringCrystalline Defects	1993	17
Dependence on the Schottky metal and crystal orientation of the Schottky diode characteristics of β-SiC single crystals grown by chemical vapor deposition Yoshihisa Fujii, Mitsuhiro Shigeta, Katsuki Furukawa, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic Devicesβ-Sic Single Crystals	1988	16

Page 1