Katsuki Furukawa

Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

Hiroo Yugami, Satοru Nakashima, Akiyoshi Mitsuishi et al. · Journal of Applied Physics · 1987 · 142 citations

Materials Science, Semiconductor Technology, Engineering +11

Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition

Akira Suzuki, Atsuko Uemoto, Mitsuhiro Shigeta et al. · Applied Physics Letters · 1986 · 81 citations

Materials Science, Semiconductors, Electrical Engineering +14

Epitaxial growth of β-SiC single crystals by successive two-step CVD

Akira Suzuki, Katsuki Furukawa, Yoshiyuki Higashigaki et al. · Journal of Crystal Growth · 1984 · 66 citations

Materials Science, Materials Engineering, Semiconductor Technology +6

3C-SiC <i>p</i>-<i>n</i> junction diodes

Katsuki Furukawa, Atsuko Uemoto, Mitsuhiro Shigeta et al. · Applied Physics Letters · 1986 · 50 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +8

Electronic properties in <i>p</i>-type GaN studied by Raman scattering

Hisatomo Harima, Toshiaki Inoue, S. Nakashima et al. · Applied Physics Letters · 1998 · 40 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +11