3C-SiC <i>p</i>-<i>n</i> junction diodes

Abstract

3C-SiC p-n junction diodes are prepared on Si substrates by chemical vapor deposition growth with appropriate impurity doping, and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics are studied. I-V curves show good rectifying characteristics with a value of 3.3 for the ideal factor n and a reverse leakage current less than 10 μA at −5 V. The junction area is approximately 0.8 mm2. The built-in voltage is around 1.4 V by C-V measurements.