G. Schweeger

Statistics

Publications

Citations

175

H-Index

Active since

1989

Affiliations

Darmstadt University of Applied Sciences(Current)

Merck KGaA, Darmstadt (Germany)

University of Naples Federico II

G. Schweeger is an author at Darmstadt University of Applied Sciences specializing in semiconductor materials, electrical engineering, and engineering.

Publications per year

1989–2000

Publications

A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs]

M. E. Rosar, B. Leroy, G. Schweeger · IEEE Transactions on Electron Devices · 2000 · 58 citations

Engineering, Computer Engineering, Electrical Engineering +17

A new GaAs technology for stable FETs at 300 degrees C

K. Fricke, H.L. Hartnagel, R. J. Schutz et al. · IEEE Electron Device Letters · 1989 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

Novel <i>in</i> <i>situ</i> electrochemical technology for formation of oxide- and defect-free Schottky contact to GaAs and related low-dimensional structures

Tamotsu Hashizume, G. Schweeger, Nanjian Wu et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

Analytical model for GaAs pin diodes for a wide range of currents and temperatures

Salvatore Bellone, G. Cocorullo, Francesco G. Della Corte et al. · Solid-State Electronics · 1992 · 14 citations

Engineering, Electrical Engineering, Microelectronics +14

Thickness-field excited thickness-shear resonators in (110) GaAs

Klas Hjort, G. Schweeger, Alfons Dehé et al. · Applied Physics Letters · 1995 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

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