B. Leroy - Concepedia

Author

B. Leroy

IBM (France)

Also Known As

B Leroy, B. Leroy, Bernard Leroy, James Lequeux

Publications

499

Citations

H-Index

Concepts

All Affiliations

IBM (France)

About

B. Leroy is an author at IBM (France) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	398
2	Applied Physics	7	7	398
3	Materials Engineering	3	3	136
4	Natural Sciences	1	1	22
5	Electrical Engineering	1	1	57

B. Leroy

Publications

420

Citations

H-Index

Page 1

	Year	Citations
Kinetics of growth of the oxidation stacking faults B. Leroy Journal of Applied Physics EngineeringOxidation ResistanceSilicon On InsulatorOxidation Stacking FaultsReliability Engineering	1979	96
Warpage of Silicon Wafers B. Leroy, Christian Plougonven Journal of The Electrochemical Society EngineeringSilicon On InsulatorDefect ToleranceWafer Scale ProcessingHigh Temperature Processing	1980	95
Stresses and silicon interstitials during the oxidation of a silicon substrate B. Leroy Philosophical Magazine B Materials ScienceEngineeringCrystalline DefectsAbstract ModelsStress-induced Leakage Current	1987	84
A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs] M. E. Rosar, B. Leroy, G. Schweeger IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringPhysicsInterface Trap Density	2000	57
Cavities and dislocations induced in silicon by MeV He implantation S. Godey, Thierry Sauvage, E. Ntsoenzok, Journal of Applied Physics Materials ScienceIon ImplantationEngineeringDislocation InteractionCrystalline Defects	2000	26
Ring-shaped stacking faults induced by oxide precipitates in silicon Christian Plougonven, B. Leroy, J. Arhan, Journal of Applied Physics EngineeringCrystal Growth TechnologyRing-shaped Stacking FaultSilicon On InsulatorDefect Tolerance	1978	22
Visible absorption cross-sections of NO2 at 298 K and 235 K B. Leroy, P. Rigaud, E. K. S. Hicks Annales Geophysicae PhysicsOptical PropertiesSpectroscopyNatural SciencesRadiative Absorption	1987	22
Kinetics of growth of the oxidation stacking faults: The capture of interstitials by partial dislocation B. Leroy Journal of Applied Physics EngineeringOxidation ResistanceDefect TolerancePartial DislocationCorrosion	1982	18

Page 1