Insulated-gate and junction-gate FET's of CVD-Grown β-SiC

Abstract

An insulated-gate field effect transistor (IGFET) and a junction-gate FET (JFET) of cubic silicon carbide (β-SiC) have been fabricated using chemical vapor deposition (CVD) growth on Si substrate. In order to improve the characteristics, a boron-doped p-layer is used under the n-channel layer. Both FET's show clear drain characteristics for the first time using CVD-grown β-SiC.