Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers

High-mobility Si and Ge structures

F. Schäffler · Semiconductor Science and Technology · 1997 · 765 citations

Engineering, Materials Science, Physics +17

Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green et al. · Applied Physics Letters · 1991 · 688 citations

Engineering, Materials Engineering, Materials Science +16

Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition

C. Rosenblad, H. R. Deller, Alex Dommann et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 148 citations

Natural Sciences, Materials Engineering, Materials Science +17

Facts and artefacts in the characterization of Si/SiGe multiayers with SIMS

P. C. Zalm, C. J. Vriezema, D. J. Gravesteijn et al. · Surface and Interface Analysis · 1991 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Silicon germanium makes its mark

Douglas J. Paul · Physics World · 2000 · 24 citations

Engineering, Electrical Engineering, Materials Science +14