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New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor
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2004
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Non-volatile MemoryEngineeringFerroelectric Random-access MemoryBiomedical EngineeringHigh DensityNanoelectronicsMemory DeviceMaterials EngineeringElectrical EngineeringComputer EngineeringMicroelectronicsSpintronicsVertical CapacitorApplied PhysicsSemiconductor MemoryScalable 3Competitive Feram CellNon VolatilityFunctional Materials
There is a considerable interest in ferroelectric random access memories (FeRAMs), because they combine non volatility with fast access time and low operation voltage. However, current FeRAMs still have a large cell size compared to DRAM or Flash. To develop a small and competitive FeRAM cell is the most challenging issue for a high density and stand-alone memory. In this work we demonstrate a novel Chain FeRAM cell using a new 3 dimensional Vertical Capacitor concept for the first time.