2004 · 14 citations · 0 references
EngineeringComputer EngineeringMaterials ScienceElectronic MaterialsMemoryMicroelectronicsMemory DevicesMemory HierarchyMemory Hierarchy DesignMemory Subsystem DesignMos CapacitorsNanoelectronicsFerroelectric Random-access MemoryMemory Cell DesignMemory Circuit DesignNon-volatile Ferroelectric MemoryNon-volatile Memory DesignRandom Access Memory (Ram)Three-dimensional Memory
There is a considerable interest in ferroelectric random access memories (FeRAMs), because they combine non volatility with fast access time and low operation voltage. However, current FeRAMs still have a large cell size compared to DRAM or Flash. To develop a small and competitive FeRAM cell is the most challenging issue for a high density and stand-alone memory. In this work we demonstrate a novel Chain FeRAM cell using a new 3 dimensional Vertical Capacitor concept for the first time.