I. Kunishima

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

T. Morimoto, T. Ohguro, H.S. Momose et al. · IEEE Transactions on Electron Devices · 1995 · 275 citations

Engineering, Electrical Engineering, Materials Science +17

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes

H. Shiga, D. Takashima, S. Shiratake et al. · IEEE Journal of Solid-State Circuits · 2010 · 75 citations

Engineering, Computer Engineering, Electrical Engineering +17

Ferroelectric Properties of Pb(Zi, Ti)O₃ Capacitor with Thin SrRuO₃ Films within Both Electrodes

Toyota Morimoto, O. Hidaka, Kouji Yamakawa et al. · Japanese Journal of Applied Physics · 2000 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-density chain ferroelectric random access memory (chain FRAM)

D. Takashima, I. Kunishima · IEEE Journal of Solid-State Circuits · 1998 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +12

A NiSi salicide technology for advanced logic devices

T. Morimoto, H.S. Momose, T. Iinuma et al. · 2002 · 34 citations

Engineering, Electrical Engineering, Materials Science +15