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Materials ScienceEngineeringApplied PhysicsFeram TechnologyMaterial Performance +1

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New phenomena in homoepitaxial growth of metals

Bene Poelsema, Ralf Kunkel, N. Nagel, +4

Applied Physics A

Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologyApplied Physics +3

Status and outlook of emerging nonvolatile memory technologies

Georg Müller, Thomas D. Happ, M. Kund, +3

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Preparation and Properties of ferroelectric Bi₂SrTa₂O₉ thin films for FeRAM using Flash-MOCVD

T. Ami, Katsuyuki Hironaka, C. Isobel, +7

MRS Proceedings

Materials EngineeringMaterials ScienceMultiferroicsMagnetic PropertiesEngineering +6

Fatigue effect in ferroelectric PbZr1−xTixO3 thin films

P. Schorn, D. Bräuhaus, U. Böttger, +4

Journal of Applied Physics

Materials ScienceMaterials EngineeringMultiferroicsFatigue EffectPb Zr 1 +11

Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)

Jeffrey F. Roeder, B. C. Hendrix, Frank Hintermaier, +12

Journal of the European Ceramic Society

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Influence of deposition conditions on Ir/IrO2 oxygen barrier effectiveness

C. U. Pinnow, I. Kasko, N. Nagel, +9

Journal of Applied Physics

EngineeringOxidation ResistanceDeposition ConditionsThin Film Process TechnologyChemical Deposition +16

The coalescence of silicon layers grown over SiO2 by liquid-phase epitaxy

N. Nagel, Florian Banhart, Erwin Czech, +3

Applied Physics A

Materials ScienceLiquid-phase EpitaxyEngineeringPhysicsSilicon Layers +7

Emerging non-volatile memory technologies

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