R.E. Scheuerlein - Concepedia

Author

R.E. Scheuerlein

IBM (United States)

Also Known As

R. E. Scheuerlein, R. Scheuerlein, R.E. Scheuerlein, Roy Scheuerlein

Publications

Citations

H-Index

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center IBM Research - Tokyo IBM Research - Almaden Matrix Research (United States)

About

R.E. Scheuerlein is an author at IBM (United States) specializing in engineering, microelectronics, and computer architecture.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	2K
2	Computer Engineering	10	10	616
3	Applied Physics	6	6	1.7K
4	Natural Sciences	2	2	1.3K
5	Humanities	1	1	73

R.E. Scheuerlein

Publications

Citations

H-Index

Page 1

	Year	Citations
Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) S. Parkin, K. P. Roche, M. G. Samant, Journal of Applied Physics Non-volatile MemoryMagnetic PropertiesEngineeringEmerging Memory TechnologyMagnetic Resonance	1999	1.1K
Magnetization Reversal in Micron-Sized Magnetic Thin Films R. H. Koch, J. Deak, David W. Abraham, Physical Review Letters Magnetic PropertiesEngineeringMagnetic ResonanceMagnetic MaterialsMagnetoresistance	1998	204
A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein, IEEE Journal of Solid-State Circuits Non-volatile MemoryEngineeringVlsi DesignEmerging Memory TechnologyComputer Architecture	2013	175
A 130.7mm<sup>2</sup> 2-layer 32Gb ReRAM memory device in 24nm technology Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein, Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringReram Test Chip	2013	116
Memories of tomorrow W. Reohr, H. Honigschmid, R. P. Robertazzi, IEEE Circuits and Devices Magazine Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureShort Read	2002	73
A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell R.E. Scheuerlein, W. J. Gallagher, S. Parkin, Non-volatile MemoryEngineeringComputer ArchitectureNon-volatile StorageHardware Security	2002	68
A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's Nicky Lu, P.E. Cottrell, Winston J. Craig, IEEE Journal of Solid-State Circuits Non-volatile MemoryElectrical EngineeringDynamic Random-access MemoryEngineeringNanoelectronics	1986	55
512-Mb PROM with a three-dimensional array of diode/antifuse memory cells Mark Johnson, Ali Al-Shamma, D. Bosch, IEEE Journal of Solid-State Circuits Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer Architecture512-Mb One-time-programmable Memory	2003	53
512 Mb PROM with 8 layers of antifuse/diode cells Matthew Crowley, Ali Al-Shamma, D. Bosch, Hardware SecurityEngineeringMb PromFlash MemoryComputer Engineering	2003	29
Magneto-resistive IC memory limitations and architecture implications R.E. Scheuerlein MagnetismElectrical EngineeringSpintronicsEngineeringNon-volatile Memory	2002	21

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