R.E. Scheuerlein

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

S. Parkin, K. P. Roche, M. G. Samant et al. · Journal of Applied Physics · 1999 · 1.2K citations

Natural Sciences, Materials Engineering, Materials Science +15

Magnetization Reversal in Micron-Sized Magnetic Thin Films

R. H. Koch, J. Deak, David W. Abraham et al. · Physical Review Letters · 1998 · 205 citations

Natural Sciences, Materials Science, Physics +17

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein et al. · IEEE Journal of Solid-State Circuits · 2013 · 177 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 130.7mm<sup>2</sup> 2-layer 32Gb ReRAM memory device in 24nm technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein et al. · 2013 · 117 citations

Engineering, Computer Engineering, Electrical Engineering +9

Memories of tomorrow

W. Reohr, H. Honigschmid, R. P. Robertazzi et al. · IEEE Circuits and Devices Magazine · 2002 · 74 citations

Natural Sciences, Computer Engineering, Materials Science +16