Publication | Closed Access
A 130.7mm<sup>2</sup> 2-layer 32Gb ReRAM memory device in 24nm technology
116
Citations
4
References
2013
Year
Unknown Venue
Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringReram Test ChipReram Memory DeviceEmerging Memory TechnologyMeox-based 32GbMultiple-layered ArchitecturesComputer EngineeringComputer ArchitectureMemory DeviceMemory DevicesSemiconductor MemoryMicroelectronicsMemory Architecture
ReRAM has been considered as one of the potential technologies for the next-generation nonvolatile memory, given its fast access speed, high reliability, and multi-level capability. Multiple-layered architectures have been used for several megabit test-chips and memory macros [1-3]. This paper presents a MeOx-based 32Gb ReRAM test chip developed in 24nm technology.
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