Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2

The estimation of dislocation densities in metals from X-ray data

Peter Gay, P. B. Hirsch, Anthony E. Kelly · Acta Metallurgica · 1953 · 520 citations

Natural Sciences, Materials Engineering, Materials Science +14

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

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Engineering, Electrical Engineering, Materials Science +17

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

Michael K. Kelly, R. P. Vaudo, V. M. Phanse et al. · Japanese Journal of Applied Physics · 1999 · 310 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Yuichi Oshima, Takeshi Eri, Masatomo Shibata et al. · Japanese Journal of Applied Physics · 2003 · 285 citations

Engineering, Materials Engineering, Materials Science +17

Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

Sung S. Park, Il-W. Park, Sung Ho Choh · Japanese Journal of Applied Physics · 2000 · 157 citations

Engineering, Materials Engineering, Materials Science +16