Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

R. C. Powell, N.-E. Lee, Y.-W. Kim et al. · Journal of Applied Physics · 1993 · 418 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence of ion-implanted GaN

J. I. Pánkové, J.A. Hutchby · Journal of Applied Physics · 1976 · 342 citations

Engineering, Materials Engineering, Materials Science +16

Cross Sections for Collisions of Electrons and Photons with Nitrogen Molecules

Yukikazu Itikawa, Makoto Hayashi, A. Ichimura et al. · Journal of Physical and Chemical Reference Data · 1986 · 342 citations

Natural Sciences, Chemistry, Physics +17

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

Ting Lei, Karl Ludwig, T. D. Moustakas · Journal of Applied Physics · 1993 · 223 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of group III nitrides on Si(111) by plasma-assisted molecular beam epitaxy

K. S. Stevens, Akira Ohtani, A. F. Schwartzman et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 34 citations

Engineering, Materials Engineering, Materials Science +17