N.-E. Lee

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

R. C. Powell, N.-E. Lee, Y.-W. Kim et al. · Journal of Applied Physics · 1993 · 416 citations

Aluminium Nitride, Engineering, α-Gan Films +16

Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+<i>x</i> ions: Growth kinetics and defect structure

N.-E. Lee, R. C. Powell, Y.-W. Kim et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1995 · 57 citations

Wide-bandgap Semiconductor, Engineering, Rimbe Films +16

Growth, microstructure, and strain relaxation in low-temperature epitaxial Si1−<i>x</i>Ge<i>x</i> alloys deposited on Si(001) from hyperthermal beams

N.-E. Lee, M. Matsuoka, M. R. Sardela et al. · Journal of Applied Physics · 1996 · 22 citations

Materials Science, Materials Engineering, Ion Implantation +14

Crystal growth and electronic properties of ultrahigh vacuum ion-beam sputter deposited Sb-doped Si(001)2×1

N.-E. Lee, G. A. Tomasch, G. Xue et al. · Applied Physics Letters · 1994 · 10 citations

Engineering, Integrated Circuits, Electronic Properties +17