G. A. Tomasch

Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam Epitaxy

R. C. Powell, G. A. Tomasch, Y.-W. Kim et al. · MRS Proceedings · 1989 · 62 citations

Materials Engineering, Materials Science, Electrical Engineering +5

Low-temperature Si(001) epitaxy using low-energy (〈<i>E</i> 〉≂18 eV) Si atoms

N.-E. Lee, G. A. Tomasch, J. E. Greene · Applied Physics Letters · 1994 · 52 citations

Semiconductors, Materials Science, Materials Engineering +15

Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition

G. A. Tomasch, Y.-W. Kim, L. C. Markert et al. · Thin Solid Films · 1993 · 15 citations

Materials Science, Engineering, Crystalline Defects +8

Crystal growth and electronic properties of ultrahigh vacuum ion-beam sputter deposited Sb-doped Si(001)2×1

N.-E. Lee, G. A. Tomasch, G. Xue et al. · Applied Physics Letters · 1994 · 10 citations

Engineering, Integrated Circuits, Electronic Properties +17

Summary Abstract: A high-resolution x-ray photoelectron spectroscopy study of the valence-band structure of single-crystal metastable (GaAs)(1−<i>x</i>)(Ge2)<i>x</i>

B. Kramer, G. A. Tomasch, Manisha Ray et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1988 · 10 citations

X-ray Crystallography, X-ray Spectroscopy, Engineering +17