Concepedia

L. C. Markert

LC

Statistics

Publications

14

Citations

1.2K

H-Index

12

Active since

1987

Affiliations

University of Illinois Urbana-Champaign(Current)

Linköping University

University of Illinois at Springfield

L. C. Markert is an author at University of Illinois Urbana-Champaign specializing in applied physics, engineering, and materials science.

Top concepts

Applied PhysicsEngineeringMaterial ScienceThin FilmsCrystalline DefectsSurface ScienceMaterials EngineeringSemiconductorsMicrostructureElectrical Engineering

Publications per year

1987–1994

14

Publications

14

Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardness

Ulf Helmersson, Snejana V. Todorova, Scott A. Barnett et al. · Journal of Applied Physics · 1987 · 754 citations

Engineering, Severe Plastic Deformation, High Mechanical Hardness +16

Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy

M. Arif Hasan, J. Knall, Scott A. Barnett et al. · Journal of Applied Physics · 1989 · 72 citations

Materials Science, Semiconductors, Si Growth Rate +15

Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy

W.-X. Ni, J. Knall, M. Arif Hasan et al. · Physical review. B, Condensed matter · 1989 · 71 citations

Materials Science, Materials Engineering, Epitaxial Growth +15

Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 discharges

Lars Hultman, J.‐E. Sundgren, L. C. Markert et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 68 citations

Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy

J.-P. Noël, N. Hirashita, L. C. Markert et al. · Journal of Applied Physics · 1989 · 45 citations

Si Films, Engineering, Optoelectronic Devices +17

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