Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfaces

N. Hirashita, Makio Kinoshita, I. Aikawa, +1

Applied Physics Letters

EngineeringSurface HydrogenOxidation ResistanceH2 DesorptionChemistry +15

Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

Shinichi Takagi, Tomohisa Mizuno, Tetsuo Tezuka, +9

Electrical EngineeringChannel EngineeringEngineeringSemiconductor DeviceNanoelectronics +9

Chemistry and band offsets of HfO2 thin films for gate insulators

M. Oshima, Satoshi Toyoda, Taiga Okumura, +6

Applied Physics Letters

EngineeringOptoelectronic DevicesChemistrySilicon On InsulatorSemiconductor Device +17

Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy

Satoshi Toyoda, Jun Okabayashi, Hiroshi Kumigashira, +5

Journal of Electron Spectroscopy and Related Phenomena

Materials ScienceIi-vi SemiconductorEngineeringOxide ElectronicsSurface Science +8

Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy

J.-P. Noël, N. Hirashita, L. C. Markert, +6

Journal of Applied Physics

Si FilmsEngineeringOptoelectronic DevicesSilicon On InsulatorElectrical Properties +15

Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique

Shu Nakaharai, Tetsuo Tezuka, N. Hirashita, +4

Journal of Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringSurface Science +11

The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process

Shu Nakaharai, Tetsuo Tezuka, N. Hirashita, +4

Semiconductor Science and Technology

EngineeringCrystal DefectsGe FractionSilicon On InsulatorGe-condensation Process +14

Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

Paul Fons, N. Hirashita, L. C. Markert, +6

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringSb IonsEngineering +11

Electronic structure and spin polarisation of the transition metal thin film V(100)

G. Yokoyama, N. Hirashita, Tamio Oguchi, +2

Journal of Physics F Metal Physics

Materials ScienceSpintronicsMagnetismTransition Metal ChalcogenidesEngineering +13

Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method

Koji Usuda, Toshifumi Irisawa, Tomoyuki Numata, +2

Semiconductor Science and Technology

Materials ScienceStrained ChannelElectrical EngineeringIn-plane Strain RelaxationEngineering +11