In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers

New and unified model for Schottky barrier and III–V insulator interface states formation

W. E. Spicer, P. W. Chye, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1979 · 930 citations

Engineering, Materials Engineering, Materials Science +17

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

Engineering, Electrical Engineering, Materials Science +17

Column III and V elements on GaAs (110): Bonding and adatom-adatom interaction

Perry Skeath, Ching‐Yuan Su, I. Lindau et al. · Journal of Vacuum Science and Technology · 1980 · 87 citations

Natural Sciences, Materials Engineering, Materials Science +17

Development of laser diagnostic probes for chemical vapor deposition of InP/InGaAsP epitaxial layers

V. M. Donnelly, R. F. Karlicek · Journal of Applied Physics · 1982 · 72 citations

Natural Sciences, Materials Engineering, Materials Science +17

Molecular-beam-epitaxy GaAs regrowth with clean interfaces by arsenic passivation

Debra L. Miller, R. T. Chen, K. Elliott et al. · Journal of Applied Physics · 1985 · 55 citations

Engineering, Electrical Engineering, Materials Science +17