U. Resch-Esser

Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer

U. Resch-Esser, N. Esser, D.T. Wang et al. · Surface Science · 1996 · 49 citations

Engineering, Materials Engineering, Materials Science +17

Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples

N. Esser, U. Resch-Esser, Markus Pristovsek et al. · Physical review. B, Condensed matter · 1996 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +17

Microscopic structure of GaSb(001) c(2×6) surfaces prepared by Sb decapping of MBE-grown samples

U. Resch-Esser, N. Esser, B. Brar et al. · Physical review. B, Condensed matter · 1997 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17

In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers

K. Knorr, Markus Pristovsek, U. Resch-Esser et al. · Journal of Crystal Growth · 1997 · 24 citations

Engineering, Materials Engineering, Materials Science +16

Surface ordering on GaAs(100) by indium-termination

U. Resch-Esser, N. Esser, Clayton Springer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 22 citations

Natural Sciences, Materials Science, Physics +17