Japanese Journal of Applied Physics · 1998 · 89 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical SourcesOptoelectronic DevicesSemiconductor HeterostructuresSemiconductor LasersWide-bandgap SemiconductorsAmbient Temperature EffectsGallium Nitride (Gan) MaterialsHigh-power Laser DiodesPower OutputQuantum Well Laser DiodesRed Laser DiodesSemiconductor Laser DiodesTemperature Dependence Of Laser Performance
The InGaN multiquantum-well-structure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The LDs with cleaved mirror facets showed an output power as high as 420 mW per facet under room temperature continuous-wave (CW) operation. The fundamental transverse mode was observed up to an output power of 100 mW. The lifetime of the LDs at a constant output power of 30 mW was longer than 160 h under CW operation at an ambient temperature of 50°C. The wavelength drift caused by the temperature change was estimated to be 0.06 nm/K, while that of the red AlInGaP LDs was 0.3 nm/K.
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