BGaInAs alloys lattice matched to GaAs

Abstract

We report the epitaxial growth of zinc-blende BxGa1−x−yInyAs and BxGa1−xAs on GaAs substrates with boron concentrations (x) up to 2%–4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1−xAs increases by only 4–8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1−x−yInyAs layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1−yInyAs layer with the same band gap.