Impact of surface preparation on nickel–platinum alloy silicide phase formation

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie, F. M. d’Heurle, Christophe Detavernier et al. · Microelectronic Engineering · 2003 · 406 citations

Engineering, Electrical Engineering, Materials Engineering +12

Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

F. M. d’Heurle, C. S. Petersson, J. E. E. Baglin et al. · Journal of Applied Physics · 1984 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +15

Thermal expansion of the isostructural PtSi and NiSi: Negative expansion coefficient in NiSi and stress effects in thin films

Christophe Detavernier, C. Lavoie, F. M. d’Heurle · Journal of Applied Physics · 2003 · 67 citations

Natural Sciences, Materials Engineering, Materials Science +17

Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomography

Keith Thompson, Joe Bunton, Thomas F. Kelly et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Formation of intermediate phases, Ni3Si2 and Pt6Si5: Nucleation, identification, and resistivity

P. Gas, F. M. d’Heurle, F. K. LeGoues et al. · Journal of Applied Physics · 1986 · 49 citations

Natural Sciences, Chemistry, Materials Science +16