Ion-implanted <i>n</i>-channel InP metal semiconductor field-effect transistor

Abstract

Device-quality n-type layers have been produced by ion implantation in Fe-doped semi-insulating InP. 29Si has been used as the dopant and anneals were carried out with the aid of a multiple-layered encapsulant consisting of plasma-deposited Si3N4 and pyrolytic P-doped SiO2. These layers have been used to make n-channel MESFET’s for which gains of 13.7 and 9.8 dB were measured at 8 and 10 GHz, respectively. The gate metallization for these devices was Au. Low-leakage currents and adequate gate breakdown characteristics were observed.