Concepedia

Effect of ionised impurity scattering on the electron transit time in GaAs and InP f.e.t.s

G. Hill, P.N. Robson, A. Majerfeld, W. Ronald Fawcett

Electronics Letters · 1977 · 30 citations · 5 references

Abstract

The effect of ionised impurity scattering on the transient drift velocity of electrons in short-gate GaAs and InP field-effect transistors is investigated by Monte Carlo techniques.

References

5

Electron dynamics in short channel field-effect transistors

J. G. Ruch · IEEE Transactions on Electron Devices · 1972 · 398 citations

Engineering, Electrical Engineering, Physics +13

Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors

M. S. Shur · Electronics Letters · 1976 · 186 citations

Engineering, Electrical Engineering, Microelectronics +16

High-field transport in gallium arsenide and indium phosphide

W. Ronald Fawcett, D C Herbert · Journal of Physics C Solid State Physics · 1974 · 76 citations

Natural Sciences, Materials Science, Physics +17

Frequency limits of GaAs and InP field-effect transistors

Timothy J. Maloney, J. Frey · IEEE Transactions on Electron Devices · 1975 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Electron dynamics in short-channel InP field-effect transistors

Timothy J. Maloney, J. Frey · Electronics Letters · 1974 · 13 citations

Engineering, Electrical Engineering, Microelectronics +15