Frequency limits of GaAs and InP field-effect transistors

Abstract

Monte Carlo calculations of electron transport in InP and GaAs short-channel field-effect transisters (FET's) show that a significant departure from the equilibrium velocity-field curve occurs in these devices. On the basis of these calculations, InP FET's should have high-frequency performance superior to that of GaAs FET's only for effective channel lengths in excess of 1.5 µ.