R.W.H. Engelmann - Concepedia

Author

R.W.H. Engelmann

Hewlett-Packard (United States)

Also Known As

ENGELMANN,R., R. Engelmann, R. W. H. Engelmann, R.W.H. Engelmann, Reinhart Engelmann, Reinhart W.H. Engelmann

Publications

675

Citations

H-Index

Concepts

All Affiliations

Hewlett-Packard (United States)Siemens (United States)Princeton University

About

R.W.H. Engelmann is an author at Hewlett-Packard (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	506
2	Applied Physics	12	12	495
3	Physics	8	8	331
4	Electrical Engineering	5	5	231
5	High-power Lasers	4	4	127

R.W.H. Engelmann

Publications

523

Citations

H-Index

Page 1

	Year	Citations
Bias dependence of GaAs and InP MESFET parameters R.W.H. Engelmann, C.A. Liechti IEEE Transactions on Electron Devices Electrical EngineeringEngineeringRf SemiconductorPhysicsElectronic Engineering	1977	83
A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures G. Lengyel, K.W. Jelley, R.W.H. Engelmann IEEE Journal of Quantum Electronics Categoryquantum ElectronicsQuantum PhotonicsEngineeringSemiempirical ModelOptoelectronic Devices	1990	71
High-power leaky-mode multiple-stripe laser D.E. Ackley, R.W.H. Engelmann Applied Physics Letters PhotonicsEngineeringBuried HeterostructuresStripe ArrayLaser Science	1981	70
Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity-induced disordering T. Wolf, C.L. Shieh, R.W.H. Engelmann, Applied Physics Letters Wide-bandgap SemiconductorWaveguidesOptical MaterialsEngineeringOptoelectronic Devices	1989	49
Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures K.W. Jelley, R.W.H. Engelmann, K. Alavi, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringSize Related LimitationsMaximum Electroabsorption	1989	40
Gunn domain formation in the saturated current region of GaAs MESFETs R.W.H. Engelmann, C.A. Liechti Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringGunn Domain Formation	1976	39
Anomalous dependence of threshold current on stripe width in gain-guided strained-layer InGaAs/GaAs quantum well lasers C.L. Shieh, J. Mantz, H. Lee, Applied Physics Letters PhotonicsEngineeringStripe WidthQuantum DeviceApplied Physics	1989	30
Leaky modes in active three-layer slab waveguides R.W.H. Engelmann, D. Kerps IEE Proceedings I Solid State and Electron Devices PhotonicsWaveguidesOptical MaterialsRefraction LossEngineering	1980	29
Linear, or "Small-signal," theory for the Gunn effect R.W.H. Engelmann, C. F. Quate IEEE Transactions on Electron Devices EngineeringElectromagnetic CompatibilitySemiconductor DeviceSemiconductorsRf Semiconductor	1966	27
Cavity length dependence of threshold current for quantum well lasers C.L. Shieh, R.W.H. Engelmann, J. Mantz, Applied Physics Letters PhotonicsQuantum ScienceQuantum PhotonicsEngineeringQuantum Computing	1989	21

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