Concepedia

Imprint in ferroelectric SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> capacitors for non-volatile memory applications

M. Grossmann, O. Lohse, D. Bolten, Rainer Waser, Walter Hartner, G. Schindler, C. Dehm, N. Nagel, V. Joshi, N. Solayappan,

Integrated ferroelectrics · 1998 · 12 citations · 7 references

DOI

Concepts

Abstract

Abstract Imprint is known as a failure mechanism in ferroelectric capacitors due to a voltage shift in the hysteresis curve. A detailed study to investigate the time, temperature and bias voltage dependence of the voltage shift was performed on MOD SBT thin films. Lifetime extrapolation under operating conditions (125 °C) reveal values for the lifetime of well over ten years.

References

7

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Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

In Kyeong Yoo, Seshu B. Desu, Jimmy Xing · MRS Proceedings · 1993 · 77 citations

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Evaluation of Imprint Properties in Sol-Gel Ferroelectric Pb(ZrTi)O<sub>3</sub> Thin-Film Capacitors

Takashi Mihara, Hitoshi Watanabe Paz de Araujo · Japanese Journal of Applied Physics · 1993 · 76 citations

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Influence of Ti-content in the bottom electrodes on the ferroelectric properties of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>(SBT)

G. Schindler, Walter Hartner, V. Joshi et al. · Integrated ferroelectrics · 1997 · 28 citations

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The temperature dependence of ferroelectric imprint

J.M. Benedetto, M.L. Roush, Isabel K. Lloyd et al. · Integrated ferroelectrics · 1995 · 16 citations

, , +15